A low-power precomputation-based fully parallel content-addressable memory

被引:82
作者
Lin, CS [1 ]
Chang, JC [1 ]
Liu, BD [1 ]
机构
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
关键词
CAM; low power; low voltage; precomputation based; pseudo-nMOS;
D O I
10.1109/JSSC.2003.809515
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a novel VLSI architecture for a fully parallel precomputation-based content-addressable memory (PB-CAM) with low-power, low-cost, and low-voltage features. This design is based on a precomputation approach that saves not only power consumption of the CAM system, but also reduces transistor count and operating voltage of the CAM cell. In addition, the proposed PB-CAM word structure adopts the static pseudo-nMOS circuit design to improve system performance. The whole design was fabricated with the TSMC 0.35-mum single-poly quadruple-metal CMOS process. With a 128 words by 30 bits CAM size, the measurement results indicate that the proposed circuit works up to 100 MHz with power consumption of 33 mW At 3.3-V supply voltage and works. up to 30 MHz under 1.5-V supply voltage.
引用
收藏
页码:654 / 662
页数:9
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