silicon film;
vacuum deposition;
Li insertion/extraction;
high rate capability;
long cycle life;
D O I:
10.1016/j.jpowsour.2004.03.014
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
A thin film of Si was vacuum-deposited onto a 30 mum thick Ni foil from a source of n-type of Si, the film thickness examined being 200-1500 Angstrom. Li insertion/extraction evaluation was performed mainly with cyclic voltammetry (CV) and constant current charge/discharge cycling in propylene carbonate (PC) containing 1 M LiClO4 at ambient temperature. The cycleability and the Li accommodation capacity were found to depend on the film thickness. Thinner films gave larger accommodation capacity. A 500Angstrom thick Si film gave a charge capacity over 3500 mAh g(-1) being maintained during 200 cycles under 2 C charge/discharge rate, while a 1500Angstrom film revealed around 2200 mAh g(-1) during 200 cycles under 1 C rate. The initial charge loss could not be ignored but it could be reduced by controlling the deposition conditions. (C) 2004 Elsevier B.V. All rights reserved.