Performance Analysis of Nano-Electro-Mechanical-System Ultrasonic Sensor with Fringing Field Effects

被引：7

作者：

Pal, Moumita ^{[1
,2
]}

Maity, N. P. ^{[2
]}

Baishya, S. ^{[3
]}

Maity, Reshmi ^{[2
]}

机构：

[1] JIS Coll Engn, Dept Elect & Commun Engn, Kalyani 741235, W Bengal, India

[2] Mizoram Univ, Dept Elect & Commun Engn, Aizawl 796004, India

[3] Natl Inst Technol, Dept Elect & Commun Engn, Silchar 788010, India

来源：

TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS | 2021年 / 22卷 / 06期

关键词：

NEMS; MUT; SiC; Ultrasonic sensor; TRANSDUCERS; MODEL;

D O I：

10.1007/s42341-021-00297-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, modeling of the fringing field effects in a silicon carbide (SiC) based micromachined ultrasonic transducer (MUT) is reported. For such a micro/nano dimensional structure, the edge effect (fringing field) extends far away and plays an important role in overall device operation. This extended field enhances the device equivalent capacitance. The analytically developed model is validated by finite element method (FEM). Electrostatic force developed and the actuated membrane displacement profiles are also evaluated in this work. The study involves Landau and Lifschitz method for evaluating equivalent device capacitance for establishing the fringing effect in the SiC MUT. Three dimensional modelling is also exhibited here to accurately portray the device characteristics precisely. Both the analytical and simulation establish the significant effect of fringing field in device operation.

引用

页码：757 / 763

页数：7

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