Fundamental limits of exciton-exciton annihilation for light emission in transition metal dichalcogenide monolayers

被引：132

作者：

Yu, Yiling ^{[1
,2
]}

Yu, Yifei ^{[1
]}

Xu, Chao ^{[2
]}

Barrette, Andy ^{[2
]}

Gundogdu, Kenan ^{[2
]}

Cao, Linyou ^{[1
,2
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Box 7907, Raleigh, NC 27695 USA

[2] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA

来源：

PHYSICAL REVIEW B | 2016年 / 93卷 / 20期

基金：

美国国家科学基金会;

关键词：

GIANT BANDGAP RENORMALIZATION; MONO LAYER; MOS2; DYNAMICS; WS2; BIEXCITONS; TRIONS;

D O I：

10.1103/PhysRevB.93.201111

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We quantitatively illustrate the fundamental limit that exciton-exciton annihilation (EEA) may impose on the light emission of monolayer transition metal dichalcogenide (TMDC) materials. The EEA in TMDC monolayers shows a dependence on the interaction with substrates as its rate increases from 0.1 cm(2)/s (0.05 cm(2)/s) to 0.3 cm(2)/s (0.1 cm(2)/s) with the substrates removed for WS2 (MoS2) monolayers. It turns to be the major pathway of exciton decay and dominates the luminescence efficiency when the exciton density is beyond 10(10) cm(-2) in suspended monolayers or 10(11) cm(-2) in supported monolayers. This sets an upper limit on the density of injected charges in light-emission devices for the realization of optimal luminescence efficiency. The strong EEA rate also dictates the pumping threshold for population inversion in the monolayers to be 12-18 MW/cm(2) (optically) or 2.5-4 x 10(5) A/cm(2) (electrically).

引用

页数：5

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