共 14 条
- [4] Ge GAA FETs and TMD FinFETs for the Applications Beyond Si-A Review [J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2016, 4 (05): : 286 - 293
- [5] High Mobility Ge pMOSFETs with ZrO2 Dielectric: Impacts of Post Annealing [J]. NANOSCALE RESEARCH LETTERS, 2019, 14 (1):
- [8] 50 nm gate electrode patterning using a neutral-beam etching system [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (04): : 1506 - 1512
- [9] Atomic layer germanium etching for 3D Fin-FET using chlorine neutral beam [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2019, 37 (02):