High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free Etching

被引:9
作者
Ohori, Daisuke [1 ,2 ,3 ,4 ,5 ,6 ,7 ,8 ]
Fujii, Takuya
Noda, Shuichi [8 ]
Mizubayashi, Wataru [8 ]
Endo, Kazuhiko [6 ,8 ]
Lee, Yao-Jen [9 ]
Tarng, Jenn-Hwan [3 ,4 ,5 ]
Li, Yiming [1 ,2 ,3 ,4 ,5 ,6 ]
Samukawa, Seiji [3 ,4 ,5 ,6 ,7 ,8 ]
机构
[1] Natl Chiao Tung Univ, Joint Res Ctr, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Tohoku Univ, Hsinchu 300, Taiwan
[3] Natl Chiao Tung Univ, Inst Commun Engn, Hsinchu 300, Taiwan
[4] Natl Chiao Tung Univ, Dept Elect & Comp Engn, Hsinchu 300, Taiwan
[5] Natl Chiao Tung Univ, Ctr mmWave Smart Radar Syst & Technol, Hsinchu 300, Taiwan
[6] Tohoku Univ, Inst Fluid Sci, Sendai, Miyagi 9808577, Japan
[7] Tohoku Univ, Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan
[8] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
[9] Taiwan Semicond Res Inst, Hsinchu 300, Taiwan
来源
IEEE OPEN JOURNAL OF NANOTECHNOLOGY | 2021年 / 2卷
关键词
Nanotechnology; Germanium; Licenses; Integrated circuits; Silicon; Electron mobility; Artificial intelligence; Field effect transistors; gate leakage; germanium; nanofabrication; surface roughness; SIMULATION; DESIGN;
D O I
10.1109/OJNANO.2021.3055150
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We investigated a high electron mobility Ge FinFET fabricated by defect-free and roughnessfree atomic layer neutral beam etching (NBE) compared with one fabricated by conventional plasma etching (PE). The etching interface roughness and defect were estimated by high-resolution transmission electron microscopy (TEM). In the case of using atomic layer defect-free NBE, the root-mean-square roughness of the Ge Fin sidewall surface is 1/3 times smaller than that using PE. Then, the electron mobility of Ge FinFET was improved by 1.65 times compared with that of a PE etched FinFET sample. For the subthreshold swing, the defect density of the interface between the Ge and gate dielectric film was improved by NBE. Ioff average currents of NBE and PE were around 18.1 and 57.6 nA/mu m, respectively. As a result, NBE reduces the off-leakage current to 1/3 times less than PE. This corresponded to the differences in surface roughness and defect generation between NBE and PE. Therefore, we found that NBE could achieve a good performance by defect-free and atomically-flat etching the surface.
引用
收藏
页码:26 / 30
页数:5
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