Strain-mediated metal-insulator transition in epitaxial ultrathin films of NdNiO3

被引：89

作者：

Liu, Jian ^{[1
]}

Kareev, M. ^{[1
]}

Gray, B. ^{[1
]}

Kim, J. W. ^{[2
]}

Ryan, P. ^{[2
]}

Dabrowski, B. ^{[3
]}

Freeland, J. W. ^{[2
]}

Chakhalian, J. ^{[1
]}

机构：

[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

[2] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA

[3] No Illinois Univ, Dept Phys, De Kalb, IL 60115 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 23期

基金：

美国国家科学基金会;

关键词：

THIN-FILMS; NEUTRON-DIFFRACTION; RNIO3; R; PEROVSKITES; OXIDES; ND;

D O I：

10.1063/1.3451462

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have synthesized epitaxial NdNiO3 ultrathin films in a layer-by-layer growth mode under tensile and compressive strain on SrTiO3 (001) and LaAlO3 (001), respectively. A combination of x-ray diffraction, temperature dependent resistivity, and soft x-ray absorption spectroscopy has been applied to elucidate electronic and structural properties of the samples. In contrast to the bulk NdNiO3, the metal-insulator transition under compressive strain is found to be completely quenched, while the transition remains under the tensile strain albeit modified from the bulk behavior. (C) 2010 American Institute of Physics. [doi:10.1063/1.3451462]

引用

页数：3

共 24 条

[21] SYSTEMATIC STUDY OF INSULATOR-METAL TRANSITIONS IN PEROVSKITES RNIO3 (R = PR, ND, SM, EU) DUE TO CLOSING OF CHARGE-TRANSFER GAP [J].