A device level negative feedback in the emitter line of SCR-structures as a method to realize latch-up free ESD protection

被引：9

作者：

Concannon, A ^{[1
]}

Vashchenko, VA ^{[1
]}

ter Beek, M ^{[1
]}

Hopper, P ^{[1
]}

机构：

[1] Natl Semicond Corp, Santa Clara, CA 95052 USA

来源：

41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2003年

关键词：

D O I：

10.1109/RELPHY.2003.1197728

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The practical goal of this study is to develop an efficient design solution for the control of the holding voltage of thyristor-type structures (ones operating in the left part of S-shape I-V characteristic), thereby making them suitable for use in mixed-signal and in power supply protection circuits. This specific design is applied to the cascoded LVTSCR structures and validated on the basis of ESD test structures and I/O cells. The research objective was to control the avalanche-injection conductivity modulation by the emitter injection of the device level, thereby achieving control of the section of the S-shape I-V curve responsible for the holding voltage.

引用

页码：105 / 111

页数：7

共 22 条

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