Loss-coupled DFB nano-ridge laser monolithically grown on a standard 300-mm Si wafer

被引:7
作者
Shi, Yuting [1 ]
Pantouvaki, Marianna [2 ]
Van Campenhout, Joris [2 ]
Colucci, Davide [1 ,2 ]
Baryshnikova, Marina [2 ]
Kunert, Bernardette [2 ]
Van Thourhout, Dries [1 ,2 ]
机构
[1] Univ Ghent, INTEC, Technol Pk Zwynaarde 126, B-9052 Ghent, Belgium
[2] IMEC, Kapeldreef 75, B-3001 Heverlee, Belgium
关键词
QUANTUM-DOT LASERS; GAIN; INTEGRATION;
D O I
10.1364/OE.422245
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We present a loss-coupled distributed feedback microlaser, monolithically grown on a standard 300-mm Si wafer using nano-ridge engineering. The cavity is formed by integrating a metallic grating on top of the nano-ridge. This allows forming a laser cavity without etching the III-V material, avoiding damaged interfaces and the associated carrier loss. Simulations, supported by experimental characterisation of the modal gain of the nano-ridge devices, predict an optimal duty cycle for the grating of -0.4, providing a good trade-off between coupling strength and cavity loss for the lasing mode. The model was experimentally verified by characterising the lasing threshold and external efficiency of devices exhibiting gratings with varying duty cycle. The high modal gain and low threshold obtained prove the excellent quality of the epitaxial material. Furthermore, the low loss metal grating might provide a future route to electrical injection and efficient heat dissipation of these nanoscale devices. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码:14649 / 14657
页数:9
相关论文
共 25 条
  • [1] Electrically driven hybrid Si/III-V Fabry-Perot lasers based on adiabatic mode transformers
    Ben Bakir, B.
    Descos, A.
    Olivier, N.
    Bordel, D.
    Grosse, P.
    Augendre, E.
    Fulbert, L.
    Fedeli, J. M.
    [J]. OPTICS EXPRESS, 2011, 19 (11): : 10317 - 10325
  • [2] Chen SM, 2016, NAT PHOTONICS, V10, P307, DOI [10.1038/nphoton.2016.21, 10.1038/NPHOTON.2016.21]
  • [3] A MODEL FOR GRIN-SCH-SQW DIODE-LASERS
    CHINN, SR
    ZORY, PS
    REISINGER, AR
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (11) : 2191 - 2214
  • [4] THEORETICAL GAIN OF STRAINED-LAYER SEMICONDUCTOR-LASERS IN THE LARGE STRAIN REGIME
    CHONG, TC
    FONSTAD, CG
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (02) : 171 - 178
  • [5] Chuang S.L., 2010, PHYS PHOTONIC DEVICE
  • [6] COUPLING-COEFFICIENTS IN GAIN-COUPLED DFB LASERS - INHERENT COMPROMISE BETWEEN COUPLING STRENGTH AND LOSS
    DAVID, K
    BUUS, J
    MORTHIER, G
    BAETS, R
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (05) : 439 - 441
  • [7] BASIC ANALYSIS OF AR-COATED, PARTLY GAIN-COUPLED DFB LASERS - THE STANDING WAVE EFFECT
    DAVID, K
    BUUS, J
    BAETS, RG
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (02) : 427 - 433
  • [8] Transfer-printing-based integration of single-mode waveguide-coupled III-V-on-silicon broadband light emitters
    De Groote, Andreas
    Cardile, Paolo
    Subramanian, Ananth Z.
    Fecioru, Alin M.
    Bower, Christopher
    Delbeke, Danae
    Baets, Roel
    Roelkens, Gunther
    [J]. OPTICS EXPRESS, 2016, 24 (13): : 13754 - 13762
  • [9] Electrically pumped hybrid AlGaInAs-silicon evanescent laser
    Fang, Alexander W.
    Park, Hyundai
    Cohen, Oded
    Jones, Richard
    Paniccia, Mario J.
    Bowers, John E.
    [J]. OPTICS EXPRESS, 2006, 14 (20) : 9203 - 9210
  • [10] Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers
    Groenert, ME
    Leitz, CW
    Pitera, AJ
    Yang, V
    Lee, H
    Ram, RJ
    Fitzgerald, EA
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) : 362 - 367