MOCVD growth and properties of InGaN/GaN multi-quantum wells

Growth conditions such as trimethylgallium flow/growth rate and silicon doping affect the optical and structural properties of InGaN/GaN multi-quantum wells grown by metal-organic chemical vapor deposition. With increasing TMGa flow during InGaN well growth, the MQW luminescence shifted towards the red. Thereby, the more efficient indium incorporation at higher TM Ga flows overcompensated a slight reduction in the well thickness. In the case of GaN barrier growth, the increase in the TMGa flow caused a slight red shift in the MQW emission wavelength as well. With enhanced silicon doping of the GaN barrier layers, the MQW luminescence shifted towards blue and the thickness of bath, the GaN barriers and the InGaN wells decreased. The luminescence intensity reached a maximum at moderate silicon doping levels.