Phonon-Mediated Mid-Infrared Photoresponse of Graphene

被引:71
作者
Badioli, M. [1 ]
Woessner, A. [1 ]
Tielrooij, K. J. [1 ]
Nanot, S. [1 ]
Navickaite, G. [1 ]
Stauber, T. [2 ]
Garcia de Abajo, F. J. [1 ,3 ]
Koppens, F. H. L. [1 ]
机构
[1] ICFO Inst Ciencies Fotoniques, Castelldefels 08860, Barcelona, Spain
[2] CSIC, Inst Ciencia Mat Madrid, Dept Teoria & Simulac Mat, E-28049 Madrid, Spain
[3] ICREA, Barcelona 08010, Spain
基金
欧洲研究理事会;
关键词
mid-infrared photodetection; graphene-phonon interaction; surface phonon; hot carriers; graphene photodetection; PHOTOCURRENT; RESPONSIVITY; GENERATION; PLASMONICS;
D O I
10.1021/nl502847v
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The photoresponse of graphene at mid-infrared frequencies is of high technological interest and is governed by fundamentally different underlying physics than the photoresponse at visible frequencies, as the energy of the photons and substrate phonons involved have comparable energies. Here, we perform a spectrally resolved study of the graphene photoresponse for mid-infrared light by measuring spatially resolved photocurrent over a broad frequency range (1000-1600 cm(-1)). We unveil the different mechanisms that give rise to photocurrent generation in graphene on a polar substrate. In particular, we find an enhancement of the photoresponse when the light excites bulk or surface phonons of the SiO2 substrate. This work paves the way for the development of graphene-based mid-infrared thermal sensing technology.
引用
收藏
页码:6374 / 6381
页数:8
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