Excitation density dependence of the photoluminescence from CdxHg1-xTe multiple quantum wells

A study of the photoluminescence from a four-period CdxHg1-xTe multiple quantum well structure at 11 K as a function of excitation density is presented. High-resolution X-ray diffraction and transmission electron microscopy revealed that the quantum well structure is of high quality. This was supported by the narrow photoluminescence peak originating in the ground state electron - heavy hole transition, with a full width at half maximum of only 7.4 meV for an excitation density of 1.3 W/cm(2). When the excitation density was increased from 1.3 to 23.4 W/cm(2), the peak position was shifted toward higher energy by 2.6 meV and the full width at half maximum increased from 7.4 to 10.9 meV.