Effects of intervalley scattering on the transport properties in one-dimensional valleytronic devices

被引：15

作者：

Zhou, Jiaojiao ^{[1
]}

Cheng, Shuguang ^{[2
]}

You, Wen-Long ^{[1
]}

Jiang, Hua ^{[1
]}

机构：

[1] Soochow Univ, Coll Phys Optoelect & Energy, Suzhou 215006, Peoples R China

[2] NW Univ Xian, Dept Phys, Xian 710069, Peoples R China

来源：

SCIENTIFIC REPORTS | 2016年 / 6卷

基金：

高等学校博士学科点专项科研基金;

关键词：

POLARIZATION; FIELD; MOS2; GENERATION; LATTICE;

D O I：

10.1038/srep23211

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Based on a one-dimensional valley junction model, the effects of intervalley scattering on the valley transport properties are studied. We analytically investigate the valley transport phenomena in three typical junctions with both intervalley and intravalley scattering included. For the tunneling between two gapless valley materials, different from conventional Klein tunneling theory, the transmission probability of the carrier is less than 100% while the pure valley polarization feature still holds. If the junction is composed of at least one gapped valley material, the valley polarization of the carrier is generally imperfect during the tunneling process. Interestingly, in such circumstance, we discover a resonance of valley polarization that can be tuned by the junction potential. The extension of our results to realistic valley materials are also discussed.

引用

页数：10

共 46 条

[1]

[Anonymous], 2007, PHYS REV LETT

[2] History and physics of the Klein paradox [J].

Calogeracos, A ;

Dombey, N .

CONTEMPORARY PHYSICS, 1999, 40 (05) :313-321

[3] Valley-selective circular dichroism of monolayer molybdenum disulphide [J].

Cao, Ting ;

Wang, Gang ;

Han, Wenpeng ;

Ye, Huiqi ;

Zhu, Chuanrui ;

Shi, Junren ;

Niu, Qian ;

Tan, Pingheng ;

Wang, Enge ;

Liu, Baoli ;

Feng, Ji .

NATURE COMMUNICATIONS, 2012, 3

[4] The electronic properties of graphene [J].

Castro Neto, A. H. ;

Guinea, F. ;

Peres, N. M. R. ;

Novoselov, K. S. ;

Geim, A. K. .

REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162

[5] Selective transmission of Dirac electrons and ballistic magnetoresistance of n-p junctions in graphene [J].

Cheianov, Vadim V. ;

Fal'ko, Vladimir I. .

PHYSICAL REVIEW B, 2006, 74 (04)

[6] Controlled growth of a line defect in graphene and implications for gate-tunable valley filtering [J].

Chen, J. -H. ;

Autes, G. ;

Alem, N. ;

Gargiulo, F. ;

Gautam, A. ;

Linck, M. ;

Kisielowski, C. ;

Yazyev, O. V. ;

Louie, S. G. ;

Zettl, A. .

PHYSICAL REVIEW B, 2014, 89 (12)

[7] Fully valley-polarized electron beams in graphene [J].

Garcia-Pomar, J. L. ;

Cortijo, A. ;

Nieto-Vesperinas, M. .

PHYSICAL REVIEW LETTERS, 2008, 100 (23)

[8] Detecting topological currents in graphene superlattices [J].

Gorbachev, R. V. ;

Song, J. C. W. ;

Yu, G. L. ;

Kretinin, A. V. ;

Withers, F. ;

Cao, Y. ;

Mishchenko, A. ;

Grigorieva, I. V. ;

Novoselov, K. S. ;

Levitov, L. S. ;

Geim, A. K. .

SCIENCE, 2014, 346 (6208) :448-451

[9] Graphene Valley Filter Using a Line Defect [J].

Gunlycke, D. ;

White, C. T. .

PHYSICAL REVIEW LETTERS, 2011, 106 (13)

[10] Recent developments in transport phenomena in Weyl semimetals [J].

Hosur, Pavan ;

Qi, Xiaoliang .

COMPTES RENDUS PHYSIQUE, 2013, 14 (9-10) :857-870

← 1 2 3 4 5 →