Distribution and solubility limit of Al in Al2O3-doped ZnO sintered body

被引:71
作者
Shirouzu, Keita
Ohkusa, Takahiro
Hotta, Mikinori
Enomoto, Naoya
Hojo, Junichi
机构
[1] UBE Sci Anal Lab, Ube, Yamaguchi 7558633, Japan
[2] Kyushu Univ, Grad Sch Engn, Dept Chem & Biochem, Nishi Ku, Fukuoka 8190395, Japan
[3] Tohoku Univ, Inst Mat Res, MultiFunct Mat Sci Dvi, Aoba Ku, Sendai, Miyagi 9808577, Japan
[4] Kyushu Univ, Fac Engn, Dept Appl Chem, Nishi Ku, Fukuoka 8190395, Japan
关键词
secondary ion mass spectrometer; solubility; zinc oxide; aluminum oxide; sintering; microstructure; THERMOELECTRIC PROPERTIES; DOPED ZNO; OXIDE; CERAMICS; FILMS;
D O I
10.2109/jcersj.115.254
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A few mol% Al2O3-doped ZnO sintered body forms a substitutional solid solution and the semi-conducting property is drastically affected by the content of the dissolved Al. It was suggested from the results of XRD and EPMA that Al existed in the ZnO sintered body in the form of ZnAl2O4. Furthermore, the distribution of ZnAl2O4 was visualized by AFM and SEM. It was, however, difficult for these techniques to detect dissolved Al in ZnO grains directly. The SIMS mapping suggested that the trace amount of Al (approximately 0.3 atomic%) dissolved into ZnO grains because of high sensitivity for trace impurities. This result was consistent with the change in lattice constants of ZnO with Al dissolution.
引用
收藏
页码:254 / 258
页数:5
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