Two-photon spectral hole burning spectroscopy of InAs/GaAs quantum dots

被引：1

作者：

Moldaschl, T. ^{[1
]}

Parz, W. ^{[1
]}

Mueller, T. ^{[1
]}

Golka, S. ^{[2
]}

Strasser, G. ^{[2
]}

Unterrainer, K. ^{[1
,3
]}

机构：

[1] Vienna Univ Technol, Photon Inst, A-1040 Vienna, Austria

[2] Vienna Univ Technol, Inst Solid State Elect, A-1040 Vienna, Austria

[3] Vienna Univ Technol, Ctr Micro & Nanostruct, A-1040 Vienna, Austria

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 01期

基金：

奥地利科学基金会;

关键词：

biexcitons; gallium arsenide; indium compounds; optical hole burning; semiconductor quantum dots; spectral line broadening; two-photon processes; EXCITONS;

D O I：

10.1063/1.3460527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Femtosecond spectral hole burning experiments were performed on InAs/GaAs quantum dots to investigate the influence of high excitation intensities. The observation of additional spectral holes, as well as distinct absorption line broadening are both attributed to two-photon absorption processes. These spectral holes can be unambiguously assigned to degenerate two-photon biexciton creation, whereas the absorption line broadening is a direct result of Coulomb renormalization, initiated by carriers created through two-photon absorption in the surrounding GaAs crystal matrix and the InAs wetting layer. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3460527]

引用

页数：3

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