Single-Electron Transport through Single Dopants in a Dopant-Rich Environment

被引:87
作者
Tabe, Michiharu [1 ]
Moraru, Daniel [1 ]
Ligowski, Maciej [1 ,2 ]
Anwar, Miftahul [1 ]
Jablonski, Ryszard [2 ]
Ono, Yukinori [3 ]
Mizuno, Takeshi [1 ]
机构
[1] Shizuoka Univ, Elect Res Inst, Naka Ku, Hamamatsu, Shizuoka 4328011, Japan
[2] Warsaw Univ Technol, Div Sensors & Measuring Syst, PL-02525 Warsaw, Poland
[3] NTT Corp, NTT Basic Res Labs, Kanagawa 0108502, Japan
关键词
DOPED SILICON NANOWIRES; QUANTUM-WIRE; FLUCTUATIONS; DEVICES; ATOM; DOTS;
D O I
10.1103/PhysRevLett.105.016803
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We show that single-electron transport through a single dopant can be achieved even in a random background of many dopants without any precise placement of individual dopants. First, we observe potential maps of a phosphorus-doped channel by low-temperature Kelvin probe force microscopy, and demonstrate potential changes due to single-electron trapping in single dopants. We then show that only one or a small number of dopants dominate the initial stage of source-drain current vs gate voltage characteristics in scaled-down, doped-channel, field-effect transistors.
引用
收藏
页数:4
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