Inkjet Printed Electrodes in Thin Film Transistors

被引:25
作者
Tao, Ruiqiang [1 ]
Ning, Honglong [1 ]
Chen, Jianqiu [1 ]
Zou, Jianhua [1 ]
Fang, Zhiqiang [2 ]
Yang, Caigui [1 ]
Zhou, Yicong [1 ]
Zhang, Jianhua [3 ]
Yao, Rihui [1 ]
Peng, Junbiao [1 ]
机构
[1] South China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China
[2] South China Univ Technol, State Key Lab Pulp & Paper Engn, Guangzhou 510640, Guangdong, Peoples R China
[3] Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China
基金
中国国家自然科学基金; 美国国家科学基金会;
关键词
Inkjet printing; thin film transistors; electrodes; low-temperature techniques; high performance; CONDUCTIVE SILVER FEATURES; HIGH-RESOLUTION; CONTACT-RESISTANCE; CARBON NANOTUBE; ORGANIC TRANSISTOR; GATED TRANSISTORS; NANOPARTICLES; POLYMER; FABRICATION; INKS;
D O I
10.1109/JEDS.2018.2852288
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Inkjet printing is a non-vacuum, non-contact, low-cost, and direct patterning thin film deposition technique. Compared to traditional processes, it demands less materials and energy, simplifies processing steps and is compatible with the fast fabrication of flexible and large-size devices, thus potential in the application of thin film transistors. In this paper, we have compared the main techniques of inkjet printing, and discussed the formulation of conductive inks, the deposition of high quality electrodes, and the obtaining of high resolution and high performance thin film transistors. Moreover, the faced problems and corresponding solving methods of inkjet printed thin film transistor with low sintering temperature, small line width, short channel, high mobility, and designed structure are summarized by the understanding of the interaction among inkjet printing devices, materials, processes, and the fabrication of transistors, which providing referential significance of the following research effort.
引用
收藏
页码:774 / 790
页数:17
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