Aqueous solution-processed MoO3 thick films as hole injection and short-circuit barrier layer in large-area organic light-emitting devices

被引：36
作者：
Liang, Jian [1 ]
Zu, Feng-Shuo [1 ]
Ding, Lei [1 ]
Xu, Mei-Feng [1 ]
Shi, Xiao-Bo [1 ]
Wang, Zhao-Kui [1 ]
Liao, Liang-Sheng [1 ]
机构：
[1] Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Jiangsu, Peoples R China
来源：
APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 11期
关键词：
INDIUM-TIN-OXIDE; INTERFACIAL LAYER; BUFFER LAYERS; METAL-OXIDES; DIODES; EFFICIENCY; CELLS;
D O I：
10.7567/APEX.7.111601
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thick molybdenum trioxide (MoO3) films (ca. 120 nm) were successfully deposited by an aqueous solution-processed method based on direct dissolution of the powder of ammonium molybdate ((NH4)(6)Mo7O24 center dot 4H(2)O) precursors in deionized water. X- ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) analyses showed that aqueous solution-processed MoO3 (sMoO(3)) has almost the same characteristics as the vacuum-evaporated MoO3 (eMoO(3)). Besides acting as a hole injection material, thicker MoO3 operated as a short-circuit barrier layer in large-scale organic light-mitting devices (OLEDs). The successful fabrication of 150 x 150 mm(2) lighting panels confirmed the dual function of thick sMoO(3) films in large-area OLEDs. (C) 2014 The Japan Society of Applied Physics.
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页数：4
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