Formation of n-channel polycrystalline-Si thin-film transistors by using retrograde channel scheme with double implantation

被引：5

作者：

Juang, Miin-Horng ^{[1
]}

Huang, C. W. ^{[2
]}

Wu, M. -L. ^{[1
]}

Hwang, C. C. ^{[2
]}

Wang, J. L. ^{[2
]}

Shye, D. C. ^{[2
]}

Jang, S. -L. ^{[1
]}

机构：

[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan

[2] Ming Chi Univ Technol, Dept Elect Engn, Taipei, Taiwan

来源：

MICROELECTRONIC ENGINEERING | 2010年 / 87卷 / 04期

关键词：

Polycrystalline-Si thin-film transistors; Retrograde channel; Leakage current; LEAKAGE CURRENT; MOSFETS;

D O I：

10.1016/j.mee.2009.08.024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Excellent n-channel poly-Si thin-film transistors (poly-Si TFTs) have been formed by using retrograde channel scheme with channel doping implantation and extra counter-doping implantation, As compared to the conventional sample with undoped channel layer, a much smaller leakage current can be achieved by boron-doping the poly-Si channel layer, due to a significantly reduced depletion region. However, the on-state characteristics are degraded. A retrograde channel scheme, implemented by further phosphorus counter-doping the surface of the boron-doped channel layer, is proposed for lowering the channel surface doping concentration without changing the bulk channel doping concentration. By using the retrograde channel scheme, an off-state leakage current as low as that for the normal channel-doping scheme may be achieved, while yielding excellent on-state I-V transfer characteristics. (C) 2009 Published by Elsevier B.V.

引用

页码：620 / 623

页数：4

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