Variable-range hopping in the bulk of quantum Hall multilayers

被引：2

作者：

Walling, HA ^{[1
]}

Gwinn, EG

Maranowski, KD

Gossard, AC

机构：

[1] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat Engn, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

PHYSICAL REVIEW B | 2005年 / 71卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.71.045327

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study vertical transport through GaAs/AlGaAs multilayer samples in the regime of the integer quantum Hall effect. We find that the bulk contribution to the measured conductance has the temperature dependence expected for variable-range hopping, while the magnetic field dependence of the localization length is qualitatively similar to that found in two-dimensional quantum Hall systems. The results suggest that vertical transport through the bulk of this layered system takes place by in-plane hopping to interlayer tunneling sites.

引用

页数：6

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