Improvement of post-chemical mechanical planarization characteristics on organic low k methylsilsesquioxane as intermetal dielectric

被引：16

作者：

Liu, PT ^{[1
]}

Chang, TC

Huang, MC

Yang, YL

Mor, YS

Tsai, MS

Chung, H

Hou, J

Sze, SM

机构：

[1] Natl Nano Device Lab, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[3] Natl Chiao Tung Univ, Inst Elect, Hsinchu, Taiwan

[4] Natl Sun Yat Sen Univ, Kaohsiung 80424, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2000年 / 147卷 / 11期

关键词：

D O I：

10.1149/1.1394061

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This work has investigated the electrical and material characteristics of post-chemical mechanical planarization (CMP) methylsilsesquioxane (MSQ). Experimental results have shown that the dielectric properties of low k MSQ deteriorate after the CMP process. However, by applying H-2-plasma post-treatment, the degraded characteristics can be restored to a similar state as that of a pre-CMP MSQ film. Material and electrical analyses were performed to elucidate the detailed mechanisms of H-2-plasma treatment on post-CMP MSQ. H-2-plasma treatment provides active hydro en radicals to passivate the dangling bonds exposed in the MSQ after the CMP process. The hydrogen-rich passivation layer is hydrophobic and effectively prevents further moisture uptake. Therefore, a degradation-free CMP process can be achieved employing H-2-plasma treatment. (C) 2000 The Electrochemical Society. S0013-4651(00)04-098-2. All rights reserved.

引用

页码：4313 / 4317

页数：5

共 18 条

[11] Copper/benzocyclobutene interconnects for sub-100 nm integrated circuit technology: Elimination of high-resistivity metallic liners and high-dielectric constant polish stops [J].