Anisotropic magnetoresistance in single electron transport

被引：2
|
作者：
Fernandez-Rossier, J. [1 ]
Aguado, R. [2 ]
Brey, L. [2 ]
机构：
[1] Univ Alicante, Dept Appl Phys, Alicante 03690, Spain
[2] CSIC, Inst Ciencia Mat, Madrid 28049, Spain
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 12 | 2006年 / 3卷 / 12期
关键词：
D O I：
10.1002/pssc.200672837
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We study the effect of magnetic anisotropy in a single electron transistor with ferromagnetic electrodes and a non-magnetic island. We identify the variation delta mu of the chemical potential of the electrodes as a function of the magnetization orientation as a key quantity that permits to tune the electrical properties of the device. Different effects occur depending on the relative size of delta mu and the charging energy. We provide preliminary quantitative estimates of delta mu using a very simple toy model for the electrodes. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Wemheim.
引用
收藏
页码：4231 / 4234
页数：4
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