Anisotropic magnetoresistance in single electron transport

被引：2
|
作者：
Fernandez-Rossier, J. [1 ]
Aguado, R. [2 ]
Brey, L. [2 ]
机构：
[1] Univ Alicante, Dept Appl Phys, Alicante 03690, Spain
[2] CSIC, Inst Ciencia Mat, Madrid 28049, Spain
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 12 | 2006年 / 3卷 / 12期
关键词：
D O I：
10.1002/pssc.200672837
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We study the effect of magnetic anisotropy in a single electron transistor with ferromagnetic electrodes and a non-magnetic island. We identify the variation delta mu of the chemical potential of the electrodes as a function of the magnetization orientation as a key quantity that permits to tune the electrical properties of the device. Different effects occur depending on the relative size of delta mu and the charging energy. We provide preliminary quantitative estimates of delta mu using a very simple toy model for the electrodes. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Wemheim.
引用
收藏
页码：4231 / 4234
页数：4
相关论文
共 50 条
  • [1] Transport properties and the large anisotropic magnetoresistance of CuxNbS2 single crystals
    Wu, G.
    Wu, T.
    Li, Z.
    Zhao, L.
    Liu, R. H.
    Chen, H.
    Fang, D. F.
    Luo, J. L.
    Chen, X. H.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2009, 21 (27)
  • [2] Calculation of the anisotropic magnetoresistance in the electron gas
    Azizi, J.
    MODERN PHYSICS LETTERS B, 2015, 29 (34):
  • [3] Coulomb blockade anisotropic magnetoresistance effect in a (Ga,Mn)As single-electron transistor
    Wunderlich, J.
    Jungwirth, T.
    Kaestner, B.
    Irvine, A. C.
    Shick, A. B.
    Stone, N.
    Wang, K. -Y.
    Rana, U.
    Giddings, A. D.
    Foxon, C. T.
    Campion, R. P.
    Williams, D. A.
    Gallagher, B. L.
    PHYSICAL REVIEW LETTERS, 2006, 97 (07)
  • [4] Electron transport and magnetoresistance in ferromagnetic nanostructures
    Giordano, N
    Çetin, B
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (10): : 2404 - 2409
  • [5] Ballistic Anisotropic Magnetoresistance of Single-Atom Contacts
    Schoeneberg, J.
    Otte, F.
    Neel, N.
    Weismann, A.
    Mokrousov, Y.
    Kroeger, J.
    Berndt, R.
    Heinze, S.
    NANO LETTERS, 2016, 16 (02) : 1450 - 1454
  • [6] Single atom anisotropic magnetoresistance on a topological insulator surface
    Narayan, Awadhesh
    Rungger, Ivan
    Sanvito, Stefano
    NEW JOURNAL OF PHYSICS, 2015, 17
  • [7] Anisotropic behaviour of the magnetoresistance in single crystalline iron films
    Granberg, P
    Isberg, P
    Baier, T
    Hjörvarsson, B
    Nordblad, P
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1999, 195 (01) : 1 - 8
  • [8] Anisotropic behaviour of the magnetoresistance in single crystalline iron films
    Department of Materials Science, Uppsala Univ., Box 534, S-751 21, Uppsala, Sweden
    不详
    J Magn Magn Mater, 1 (1-8):
  • [9] Tunneling Anisotropic Magnetoresistance at the Single-Atom Limit
    Neel, N.
    Schroeder, S.
    Ruppelt, N.
    Ferriani, P.
    Kroeger, J.
    Berndt, R.
    Heinze, S.
    PHYSICAL REVIEW LETTERS, 2013, 110 (03)
  • [10] Coulomb blockade anisotropic magnetoresistance and voltage controlled magnetic switching in a ferromagnetic GaMnAs single electron transistor
    Wunderlich, J.
    Jungwirth, T.
    Irvine, A. C.
    Kaestner, B.
    Shick, A. B.
    Campion, R. P.
    Williams, D. A.
    Gallagher, B. L.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2007, 310 (02) : 1883 - 1888
12345