1.3-μm InP-based quantum-well lasers with n-doped separate confinement heterostructure layers for high-temperature operation

被引：1

作者：

Seki, S ^{[1
]}

Yokoyama, K ^{[1
]}

机构：

[1] NTT, Optoelect Labs, Kanagawa 24301, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 02期

关键词：

indium materials devices; quantum-well lasers; semiconductor device modeling; semiconductor lasers;

D O I：

10.1109/68.655357

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a novel approach for reducing the light output power penalty in 1,3-mu m InP-based strained-layer (SL) MQW lasers at elevated temperatures, It is shown that n-type doping in the separate confinement heterostructure (SCH) layers increases the barrier height in the valence band profiles effectively, which makes it possible to suppress the pile-up of holes in the SCH region under high-temperature, high-injection conditions, One significant impact of this approach is that the power penalty can be reduced to one half of that in conventional SL-MQW lasers with undoped SCH. We show that SL-MQW structures with n-doped SCH have a great potential for realizing a low power penalty as well as high efficiency in InP-based MQW lasers at elevated temperatures.

引用

收藏

页码：200 / 202

页数：3

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