A Low-Phase-Noise Monolithically Integrated 60 GHz Push-Push VCO for 122 GHz Applications in a SiGe Bipolar Technology

被引：0

作者：

Chakraborty, Abhiram ^{[1
]}

Trotta, Saverio ^{[1
]}

Weigel, Robert ^{[2
]}

机构：

[1] Infineon Technol AG, RF Innovat, Campeon 1-12, D-85579 Neubiberg, Germany

[2] Univ Erlangen Nurnberg, Chair Tech Electron, D-91058 Erlangen, Germany

来源：

2013 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2013年

关键词：

60; GHz; VCO; push-push; 122; low phase noise; fundamental suppression; SiGe; bipolar; WIDE TUNING RANGE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a 60 GHz push-push VCO fabricated in an automotive qualified SiGe:C bipolar production technology with an f(t) of 170 GHz and f(max) of 250 GHz. The VCO uses an AC coupled varactor and features a transmission line based biasing scheme for the varactor to improve the phase noise. The VCO can be tuned from 58.2 GHz to 63 GHz and achieves a minimum phase noise of -108 dBc/Hz at 1 MHz offset. The phase noise remains below -105 dBc/Hz over the entire tuning range. The VCO consumes 145 mW from a 3.3 V power supply.

引用

页码：195 / 198

页数：4

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