Mechanism of current flow in alloyed ohmic In/GaAs contacts

被引：5

作者：

Blank, T. V. ^{[1
]}

Gol'dberg, Yu. A. ^{[1
]}

Konstantinov, O. V. ^{[1
]}

Nikitin, V. G. ^{[1
]}

Posse, E. A. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS | 2007年 / 52卷 / 02期

关键词：

D O I：

10.1134/S1063784207020235

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A mechanism of current flow in an alloyed ohmic In contact to low-doped gallium arsenide (n = 4 x 10(15) cm(-3)) is studied. From the temperature dependence of the contact resistance per unit surface area, it is found that the basic mechanism of current flow is thermionic emission through a potential barrier 0.03 eV in height.

引用

页码：285 / 287

页数：3

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