Continuous-wave 1.55 μm diode-pumped surface emitting semiconductor laser for broadband multiplex spectroscopy

被引:13
作者
Jacquemet, M.
Picque, N.
Guelachvili, G.
Garnache, A.
Sagnes, I.
Strassner, M.
Symonds, C.
机构
[1] Univ Paris 11, CNRS, Photophys Mol Lab, F-91405 Orsay, France
[2] Univ Montpellier 2, CNRS, UMR5507, CEN2, Montpellier, France
[3] CNRS, LPN, F-91460 Marcoussis, France
关键词
D O I
10.1364/OL.32.001387
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A room-temperature-operating vertical external cavity surface emitting laser is applied around 1550 nm to intracavity laser absorption spectroscopy analyzed by time-resolved Fourier-transform interferometry. At an equivalent path length of 15 km, the high-resolution spectrum of the semiconductor disk laser emission covers 17 nm simultaneously. A noise-equivalent absorption coefficient at 1 s averaging equal to 1.5 x 10(-10) cm(-1)Hz(-1/2) per spectral element is reported for 65 km, the longest path length employed. (c) 2007 Optical Society of America.
引用
收藏
页码:1387 / 1389
页数:3
相关论文
共 16 条
[1]   Laser intracavity absorption spectroscopy [J].
Baev, VM ;
Latz, T ;
Toschek, PE .
APPLIED PHYSICS B-LASERS AND OPTICS, 1999, 69 (03) :171-202
[2]   Trace moisture detection using continuous-wave cavity ring-down spectroscopy [J].
Dudek, JB ;
Tarsa, PB ;
Velasquez, A ;
Wladyslawski, M ;
Rabinowitz, P ;
Lehmann, KK .
ANALYTICAL CHEMISTRY, 2003, 75 (17) :4599-4605
[3]   Diode-pumped broadband vertical-external-cavity surface-emitting semiconductor laser applied to high-sensitivity intracavity absorption spectroscopy [J].
Garnache, A ;
Kachanov, AA ;
Stoeckel, F ;
Houdré, R .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2000, 17 (09) :1589-1598
[4]   Intracavity laser absorption spectroscopy with a vertical external cavity surface emitting laser at 2.3 μm:: Application to water and carbon dioxide [J].
Garnache, A ;
Liu, A ;
Cerutti, L ;
Campargue, A .
CHEMICAL PHYSICS LETTERS, 2005, 416 (1-3) :22-27
[5]  
HE Y, 2006, LASER CHEM, V85, P355
[6]   Single-frequency cw vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling [J].
Jacquemet, M. ;
Domenech, M. ;
Lucas-Leclin, G. ;
Georges, P. ;
Dion, J. ;
Strassner, M. ;
Sagnes, I. ;
Garnache, A. .
APPLIED PHYSICS B-LASERS AND OPTICS, 2007, 86 (03) :503-510
[7]   Passively modelocked surface-emitting semiconductor lasers [J].
Keller, Ursula ;
Tropper, Anne C. .
PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 2006, 429 (02) :67-120
[8]   Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams [J].
Kuznetsov, M ;
Hakimi, F ;
Sprague, R ;
Mooradian, A .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1999, 5 (03) :561-573
[9]   Single-frequency operation of a high-power, long-wavelength semiconductor disk laser [J].
Lindberg, H ;
Larsson, A ;
Strassner, M .
OPTICS LETTERS, 2005, 30 (17) :2260-2262
[10]   0.8W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm [J].
Lindberg, H ;
Strassner, A ;
Gerster, E ;
Larsson, A .
ELECTRONICS LETTERS, 2004, 40 (10) :601-602