Temperature dependence of breakdown voltage in AlxGa1-xAs

被引：10

作者：

Groves, C ^{[1
]}

Harrison, CN ^{[1
]}

David, JPR ^{[1
]}

Rees, GJ ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 09期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.1803944

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Avalanche breakdown voltage has been measured in a series of AlxGa1-xAs (0<x<0.8) p(+)in(+) and n(+)ip(+) diodes at temperatures between 20 and 500 K. The temperature sensitivity falls with decreasing avalanche region width for all alloy compositions, with a minimum sensitivity at x=0.6, for which we offer a physical explanation. While Monte Carlo simulations show that alloy scattering reduces the temperature dependence of breakdown voltage, the effect is too small to account for the observations. (C) 2004 American Institute of Physics.

引用

页码：5017 / 5019

页数：3

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