Determination of the pHpzc of insulators surface from capacitance-voltage characteristics of MIS and EIS structures

被引:57
作者
Poghossian, AA [1 ]
机构
[1] State Engn Univ Armenia, Yerevan 375009, Armenia
关键词
pH(pzc); electrolyte-insulator-semiconductor structure; capacitance-voltage characteristics;
D O I
10.1016/S0925-4005(97)00156-1
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
A new method for determination of pH(pzc) from capacitance-voltage characteristics of MIS and EIS structures is suggested. The obtained values of the pH(pzc) (2.5 +/- 0.3 for SiO2, 2.8 +/- 0.3 for Ta2O5, 3-3.3 for Si3N4 films) agree well with results obtained from flat-plate streaming potential measurements. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:551 / 553
页数:3
相关论文
共 9 条
[1]   ION-SENSITIVE FIELD-EFFECT TRANSISTORS WITH INORGANIC GATE OXIDE FOR PH SENSING [J].
AKIYAMA, T ;
UJIHIRA, Y ;
OKABE, Y ;
SUGANO, T ;
NIKI, E .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) :1936-1941
[2]   THE INFLUENCE OF COUNTERION ADSORPTION ON THE PSI-0/PH CHARACTERISTICS OF INSULATOR SURFACES [J].
BOUSSE, L ;
DEROOIJ, NF ;
BERGVELD, P .
SURFACE SCIENCE, 1983, 135 (1-3) :479-496
[3]   THE ZETA-POTENTIAL OF SILICON-NITRIDE THIN-FILMS [J].
BOUSSE, L ;
MOSTARSHED, S .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1991, 302 (1-2) :269-274
[4]   ZETA POTENTIAL MEASUREMENTS OF TA2O5 AND SIO2 THIN-FILMS [J].
BOUSSE, L ;
MOSTARSHED, S ;
VANDERSHOOT, B ;
DEROOIJ, NF ;
GIMMEL, P ;
GOPEL, W .
JOURNAL OF COLLOID AND INTERFACE SCIENCE, 1991, 147 (01) :22-32
[5]   OPERATION OF CHEMICALLY SENSITIVE FIELD-EFFECT SENSORS AS A FUNCTION OF THE INSULATOR-ELECTROLYTE INTERFACE [J].
BOUSSE, L ;
DEROOIJ, NF ;
BERGVELD, P .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (10) :1263-1270
[6]   COMBINED MEASUREMENT OF SURFACE-POTENTIAL AND ZETA POTENTIAL AT INSULATOR ELECTROLYTE INTERFACES [J].
BOUSSE, LJ ;
MOSTARSHED, S ;
HAFEMAN, D .
SENSORS AND ACTUATORS B-CHEMICAL, 1992, 10 (01) :67-71
[7]  
Cammann K., 1979, WORKING ION SELECTIV
[8]   SURFACE IONIZATION AND COMPLEXATION AT OXIDE-WATER INTERFACE .1. COMPUTATION OF ELECTRICAL DOUBLE-LAYER PROPERTIES IN SIMPLE ELECTROLYTES [J].
DAVIS, JA ;
JAMES, RO ;
LECKIE, JO .
JOURNAL OF COLLOID AND INTERFACE SCIENCE, 1978, 63 (03) :480-499
[9]   BASIC PROPERTIES OF THE ELECTROLYTE-SIO2-SI SYSTEM - PHYSICAL AND THEORETICAL ASPECTS [J].
SIU, WM ;
COBBOLD, RSC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1805-1815