Advanced secondary ion mass spectroscopy quantification in the first few nanometer of B, P, and As ultrashallow implants

被引：10

作者：

Merkulov, A. ^{[1
]}

Peres, P. ^{[1
]}

Choi, S. ^{[1
]}

Horreard, F. ^{[1
]}

Ehrke, H. -U. ^{[2
]}

Loibl, N. ^{[2
]}

Schuhmacher, M. ^{[1
]}

机构：

[1] CAMECA SAS, F-92622 Gennevilliers, France

[2] CAMECA GmbH, D-85716 Unterschleissheim Munich, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2010年 / 28卷 / 01期

关键词：

arsenic; boron; elemental semiconductors; ion implantation; phosphorus; Rutherford backscattering; secondary ion mass spectra; silicon; silicon compounds; sputtering;

D O I：

10.1116/1.3225588

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article presents investigation on secondary ion mass spectroscopy (SIMS) profile quantification for ultrashallow profiles. New configuration for the cesium and oxygen sources on the CAMECA IMS Wf tool-provides SIMS profiling capability at 150 eV impact energy with sputter rates of 1 and 2 nm/min for the Cs+ and O-2+ primary beams, respectively. Results for as-implanted B, P, and As profiles using extremely low impact energy (EXLIE) sputtering conditions are reported. They are compared with high resolution Rutherford backscattering spectroscopy and elastic recoil detection analysis profiles. The overall results confirm that the use of EXLIE conditions minimizes near surface (depth < 5 nm) artifacts but data quantification still requires dedicated postanalysis data treatment to take into account matrix effects between Si and SiO2.

引用

页码：C1C48 / C1C53

页数：6

共 6 条

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