Narrow band photocurrent response from partially phase separated a-SiNx:H thin films

被引：2

作者：

Bommali, R. K. ^{[1
]}

Ahmad, Shahab ^{[1
]}

Sharma, Nandlal ^{[1
]}

Srivastava, P. ^{[1
]}

Prakash, G. Vijaya ^{[1
]}

机构：

[1] Indian Inst Technol Delhi, Dept Phys, Nanostech & Nanophoton Lab, New Delhi 110016, India

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 11期

关键词：

ELECTRONIC-STRUCTURE; SILICON; PHOTOLUMINESCENCE; DISSOLUTION; GAP;

D O I：

10.1063/1.4895600

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report static and dynamic photocurrent response from sub-stoichiometric a-SiNx:H thin films. The photocurrent spectral (PCS) response is peaked in the technologically important optical energy range of 2.2 to 4.5 eV. The transient photocurrent response with prolonged exposure is attributed to reduction in number of charge carriers due to trapping of photo-generated carriers at defect sites. The narrow PCS response is attributed to dominant photo-generation of carriers in the bandtails of stoichiometric Si3N4 phase and subsequent transport through the excess Si network. (C) 2014 AIP Publishing LLC.

引用

页数：6

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