Thermochromic Properties of Sn, W Co-Doped VO2 Nanostructured Thin Film Deposited by Pulsed Laser Deposition

被引：22

作者：

Hur, M. G. ^{[1
]}

Masaki, T. ^{[2
]}

Yoon, D. H. ^{[1
,2
]}

机构：

[1] Sungkyunkwan Univ, Sch Interdisciplinary Program Photovolta Syst Eng, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2014年 / 14卷 / 12期

关键词：

Vanadium Dioxide; Tin-Tungsten Co-Doping; Transition Temperature; Transmittance; Nanostructured Thin Film; INSULATOR-TRANSITION; MECHANISM;

D O I：

10.1166/jnn.2014.10054

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Tin (Sn) and tungsten (W) co-doped vanadium dioxide (VO2) nanostructured thin films with 50-nm thickness were deposited by pulsed laser deposition (PLD) to reduce the transition temperature and improve the IR transmittance. The crystal structure of the nanostructured thin films and the presence of elements were evaluated by XRD and XPS analysis. The transition temperature (T-c) of 1 at% Sn-1 at% W co-doped VO2 nanostructured thin film was decreased to about 22 degrees C (from 70.3 to 48.5 degrees C) compared with the undoped VO2 nanostructured thin film. The transmittance width in the IR range of the co-doped nanostructured thin film decreased from 37.5% to 27% compared with the undoped VO2 nanostructured thin film. Also, the width of hysteresis was narrowed by Sn doping.

引用

页码：8941 / 8945

页数：5

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