Advances in the modeling of MOVPE processes

被引：23
作者：
Karpov, SY [1 ]
机构：
[1] Soft Impact Ltd, St Petersburg 194156, Russia
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 248卷
关键词：
computer simulation; surface processes; segregation; metalorganic vapor phase epitaxy; nitrides; semiconducting III-V materials;
D O I：
10.1016/S0022-0248(02)01838-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The paper reviews the progress in the modeling of metalorganic vapor phase epitaxy (MOVPE) of carious III-V compounds. The recent studies focused on chemical gas-phase and surface phenomena have made possible the development of a global MOVPE model capable of predicting the growth rate and crystal composition within a ION accuracy for some commercial reactors. New approaches and perspective trends in MOVPE simulations are discussed. (C) 2002 Elsevier Science B.V. All rights reserved.
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页码：1 / 7
页数：7
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