A 122-242 GHz Dynamic Frequency Divider in an Advanced BiCMOS Technology

被引：0

作者：

Sene, Badou ^{[1
,2
]}

Knapp, Herbert ^{[1
]}

Reiter, Daniel ^{[1
,2
]}

Pohl, Nils ^{[2
]}

机构：

[1] Infineon Technol AG, Campeon 1-15, D-85579 Neubiberg, Germany

[2] Ruhr Univ Bochum, Univ Str 150, D-44780 Bochum, Germany

来源：

2020 15TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2021年

基金：

欧盟地平线“2020”;

关键词：

dynamic divider; SiGe; HBT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper a divide-by-2 dynamic frequency divider design in an advanced BiCMOS technology is presented. It operates from 122 GHz to 242 GHz, resulting in a bandwidth of 120GHz and draws 47.2mA from a 3.3V supply. The divider including bias circuits consumes an area 130 mu m x 130 mu m. To demonstrate the operation at higher frequencies a fundamental oscillator with a divide-by-4 divider chain is introduced. The oscillator delivers a signal at 242 GHz that has sufficient power to demonstrate the operation of the dynamic divider chain, which contains a second divider stage, optimized for lower frequencies.

引用

页码：296 / 299

页数：4

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