Diffusion barriers between Si and Cu

被引：0

作者：

Mori, H ^{[1
]}

Imahori, J ^{[1
]}

Oku, T ^{[1
]}

Murakami, M ^{[1
]}

机构：

[1] Kyoto Univ, Grad Sch Engn, Div Engn & Mat Sci, Kyoto 60601, Japan

来源：

STRESS INDUCED PHENOMENA IN METALLIZATION - FOURTH INTERNATIONAL WORKSHOP | 1998年 / 418期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermally stable, thin W2N, TaN and TaC diffusion barrier layers between Cu and Si were developed by a radio-frequency sputter-deposition technique. The W2N(8nm), TaN(8nm) and TaC(5nm) barrier layers were found to prevent the Cu diffusion to Si after annealing at 600, 700 and 600 degrees C for 30 min, respectively. These barrier layers have potential as diffusion barrier layers used in ULSI devices. Diffusion mechanism of Cu in Si was studied by using by x-ray diffraction and high-resolution electron microscopy.

引用

页码：475 / 480

页数：6