Improved ferroelectric properties of (100)-oriented PZT thin films deposited on stainless steel substrates with La0.5Sr0.5CoO3 buffer layers

被引：11
|
作者：
Li, Hongfang [1 ]
Wang, Susu [1 ]
Jian, Jie [1 ]
Dong, Hanting [1 ]
Chen, Jianguo [1 ]
Jin, Dengren [1 ]
Cheng, Jinrong [1 ]
机构：
[1] Shanghai Univ, Sch Mat Sci & Engn, 333 Nanchen Rd, Shanghai 200444, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2018年 / 29卷 / 17期
基金：
中国国家自然科学基金;
关键词：
ELECTRICAL-PROPERTIES; GROWTH;
D O I：
10.1007/s10854-018-9601-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ferroelectric Pb(Zr0.53Ti0.47)O-3 (PZT) thin films were deposited on La0.5Sr0.5CoO3 (LSCO) buffered stainless steel (SS) substrates by the sol-gel processes. The introduction of LSCO buffer layers facilitated the formation of (100)-oriented PZT thin films, and the (100) orientation degree of PZT thin films was obviously improved from 20 to 62%. Such PZT thin films with smooth and dense microstructures exhibited enhanced remnant polarization, reduced dielectric loss and leakage current density of 42 A mu C/cm(2), 2.7% at 1 kHz, and 7.6 x 10(- 7) A/cm(2) at 300 kV/cm, respectively. Moreover, the fatigue endurance property of PZT thin films was also improved.
引用
收藏
页码：14651 / 14656
页数：6
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