Properties of ZrO2 thin films prepared by laser ablation

被引：17
|
作者：
Vrejoiu, I
Matei, DG
Morar, M
Epurescu, G
Ferrari, A
Balucani, M
Lamedica, G
Dinescu, G
Grigoriu, C
Dinescu, M
机构：
[1] Natl Inst Laser Plasma & Radiat Phys, Bucharest 76900, Romania
[2] Univ Roma La Sapienza, INFM, Unit E6, Rome, Italy
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2002年 / 5卷 / 2-3期
关键词：
ZrO2; laser ablation; dielectric constant; microscopy; ablation film deposition;
D O I：
10.1016/S1369-8001(02)00083-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
ZrO2 thin films have been prepared by laser ablation of Zr or ZrO2 targets in oxygen reactive atmosphere. The influence of the deposition parameters as oxygen pressure and target composition. on the structure and morphology of the deposited layers has been studied. Scanning electron microscopy, secondary ion mass spectroscopy and dielectric constant measurements have been performed to characterize the deposited layers. Dielectric constant values in the, range 15-20 and low losses were evidenced for samples prepared in a narrow range of experimental conditions. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：253 / 257
页数：5
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