Stable temperature characteristics of InGaN blue light emitting diodes using AlGaN/GaN/InGaN superlattices as electron blocking layer

被引：27
作者：
Kim, Kyu Sang [1 ]
Kim, Jin Ha [1 ]
Jung, Su Jin [1 ]
Park, Yong Jo [1 ]
Cho, S. N. [2 ]
机构：
[1] Samsung LED, LED Lab, Suwon 443743, Kyunggi Do, South Korea
[2] Samsung Adv Inst Technol, Micro Syst Lab, Yongin 446712, Gyeonggi Do, South Korea
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 09期
关键词：
aluminium compounds; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; semiconductor quantum wells; semiconductor superlattices; wide band gap semiconductors; EFFICIENCY;
D O I：
10.1063/1.3340939
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
P-type AlGaN/GaN/InGaN superlattices were incorporated in a InGaN based blue light emitting diode as electron blocking layer to minimize the temperature dependence on optical output power. For the characteristic temperatures in range of 10 to 100 degrees C and at operation current of 350 mA, the external quantum efficiency varied by less than 0.5%. For the presented device, the negative characteristic temperature was shown to occur below temperature of 50 degrees C. The improved temperature stability in optical output power is thought to be attributed to (1) the efficiency of hole carrier transport in AlGaN/GaN/InGaN superlattices and (2) the enhanced blocking of electron overflow between multiple quantum wells and AlGaN/GaN/InGaN superlattices.
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页数：3
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