AlGaN/GaN HEMTs With Low Leakage Current and High On/Off Current Ratio

被引：64

作者：

Lin, Yu-Syuan ^{[1
]}

Lain, Yi-Wei ^{[1
]}

Hsu, Shawn S. H. ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 02期

关键词：

Flicker noise; GaN; HEMTs; leakage current; ELECTRON-MOBILITY TRANSISTORS; GATE LEAKAGE; PLASMA TREATMENT; PASSIVATION; SURFACE; RELIABILITY; GANHEMTS;

D O I：

10.1109/LED.2009.2036576

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we propose using an oxide-filled isolation structure followed by N-2/H-2 postgate annealing to reduce the leakage current in AlGaN/GaN HEMTs. An OFF-state drain leakage current that is smaller than 10(-9) A/mm (minimum 5.1 x 10(-10) A/mm) can be achieved, and a gate leakage current in the range of 7.8 x 10(-10) to 9.2 x 10(-11) A/mm (V-GS from -10 to 0 V and V-DS = 10 V) is obtained. The substantially reduced leakage current results in an excellent ON/OFF current ratio that is up to 1.5 x 10(8). An improved flicker noise characteristic is also observed in the oxide-filled devices compared with that in the traditional mesa-isolated GaN HEMTs.

引用

页码：102 / 104

页数：3

共 22 条

[1] Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors [J].

Adivarahan, V ;

Gaevski, M ;

Sun, WH ;

Fatima, H ;

Koudymov, A ;

Saygi, S ;

Simin, G ;

Yang, J ;

Khan, MA ;

Tarakji, A ;

Shur, MS ;

Gaska, R .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (09) :541-543

[2]

[Anonymous], APPL PHYS LETT

[3] Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride [J].

Arulkumaran, S ;

Egawa, T ;

Ishikawa, H ;

Jimbo, T ;

Sano, Y .

APPLIED PHYSICS LETTERS, 2004, 84 (04) :613-615

[4] GaNN- and P-type Schottky diodes: Effect of dry etch damage [J].

Cao, XA ;

Pearton, SJ ;

Dang, GT ;

Zhang, AP ;

Ren, F ;

Van Hove, JM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (07) :1320-1324

[5] Impacts of gate recess and passivation on AlGaN/GaN high electron mobility transistors [J].

Chan, Chih-Yuan ;

Lee, Ting-Chi ;

Hsu, Shawn S. H. ;

Chen, Leaf ;

Lin, Yu-Syuan .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (02) :478-484

[6]

Choi YH, 2008, IEEE POWER ELECTRON, P2590, DOI 10.1109/PESC.2008.4592331

[7] Plasma treatment for leakage reduction in AlGaN/GaN and GaN Schottky contacts [J].

Chu, Rongming ;

Shen, Likun ;

Fichtenbaum, Nicholas ;

Brown, David ;

Keller, Stacia ;

Mishra, Umesh K. .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (04) :297-299

[8] Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs [J].

Chung, Jinwook W. ;

Roberts, John C. ;

Piner, Edwin L. ;

Palacios, Tomas .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (11) :1196-1198

[9] Improved reliability of AlGaN-GaNHEMTs using an NH3 plasma treatment prior to SiN passivation [J].

Edwards, AP ;

Mittereder, JA ;

Binari, SC ;

Katzer, DS ;

Storm, DF ;

Roussos, JA .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (04) :225-227

[10] Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors [J].

Hasegawa, H ;

Inagaki, T ;

Ootomo, S ;

Hashizume, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (04) :1844-1855

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