共 39 条
AgNi Alloy As a Suitable Barrier Layer Material for NbFeSb-Based Half-Heusler Thermoelectric Modules
被引:13
作者:

Zhu, Jiaxu
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Shenzhen Univ, Guangdong Res Ctr Interfacial Engn Funct Mat, Shenzhen Key Lab Special Funct Mat,Shenzhen Engn, Coll Mat Sci & Engn,Inst Deep Underground Sci & G, Shenzhen 518060, Peoples R China Shenzhen Univ, Guangdong Res Ctr Interfacial Engn Funct Mat, Shenzhen Key Lab Special Funct Mat,Shenzhen Engn, Coll Mat Sci & Engn,Inst Deep Underground Sci & G, Shenzhen 518060, Peoples R China

Liu, Fusheng
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Shenzhen Univ, Guangdong Res Ctr Interfacial Engn Funct Mat, Shenzhen Key Lab Special Funct Mat,Shenzhen Engn, Coll Mat Sci & Engn,Inst Deep Underground Sci & G, Shenzhen 518060, Peoples R China Shenzhen Univ, Guangdong Res Ctr Interfacial Engn Funct Mat, Shenzhen Key Lab Special Funct Mat,Shenzhen Engn, Coll Mat Sci & Engn,Inst Deep Underground Sci & G, Shenzhen 518060, Peoples R China

Gong, Bo
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Shenzhen Univ, Guangdong Res Ctr Interfacial Engn Funct Mat, Shenzhen Key Lab Special Funct Mat,Shenzhen Engn, Coll Mat Sci & Engn,Inst Deep Underground Sci & G, Shenzhen 518060, Peoples R China Shenzhen Univ, Guangdong Res Ctr Interfacial Engn Funct Mat, Shenzhen Key Lab Special Funct Mat,Shenzhen Engn, Coll Mat Sci & Engn,Inst Deep Underground Sci & G, Shenzhen 518060, Peoples R China

Wang, Xiao
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Shenzhen Univ, Guangdong Res Ctr Interfacial Engn Funct Mat, Shenzhen Key Lab Special Funct Mat,Shenzhen Engn, Coll Mat Sci & Engn,Inst Deep Underground Sci & G, Shenzhen 518060, Peoples R China Shenzhen Univ, Guangdong Res Ctr Interfacial Engn Funct Mat, Shenzhen Key Lab Special Funct Mat,Shenzhen Engn, Coll Mat Sci & Engn,Inst Deep Underground Sci & G, Shenzhen 518060, Peoples R China

Ao, Weiqin
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Shenzhen Univ, Guangdong Res Ctr Interfacial Engn Funct Mat, Shenzhen Key Lab Special Funct Mat,Shenzhen Engn, Coll Mat Sci & Engn,Inst Deep Underground Sci & G, Shenzhen 518060, Peoples R China Shenzhen Univ, Guangdong Res Ctr Interfacial Engn Funct Mat, Shenzhen Key Lab Special Funct Mat,Shenzhen Engn, Coll Mat Sci & Engn,Inst Deep Underground Sci & G, Shenzhen 518060, Peoples R China

Zhang, Chaohua
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Shenzhen Univ, Guangdong Res Ctr Interfacial Engn Funct Mat, Shenzhen Key Lab Special Funct Mat,Shenzhen Engn, Coll Mat Sci & Engn,Inst Deep Underground Sci & G, Shenzhen 518060, Peoples R China Shenzhen Univ, Guangdong Res Ctr Interfacial Engn Funct Mat, Shenzhen Key Lab Special Funct Mat,Shenzhen Engn, Coll Mat Sci & Engn,Inst Deep Underground Sci & G, Shenzhen 518060, Peoples R China

Li, Yu
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Shenzhen Univ, Guangdong Res Ctr Interfacial Engn Funct Mat, Shenzhen Key Lab Special Funct Mat,Shenzhen Engn, Coll Mat Sci & Engn,Inst Deep Underground Sci & G, Shenzhen 518060, Peoples R China Shenzhen Univ, Guangdong Res Ctr Interfacial Engn Funct Mat, Shenzhen Key Lab Special Funct Mat,Shenzhen Engn, Coll Mat Sci & Engn,Inst Deep Underground Sci & G, Shenzhen 518060, Peoples R China

Hu, Lipeng
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Shenzhen Univ, Guangdong Res Ctr Interfacial Engn Funct Mat, Shenzhen Key Lab Special Funct Mat,Shenzhen Engn, Coll Mat Sci & Engn,Inst Deep Underground Sci & G, Shenzhen 518060, Peoples R China Shenzhen Univ, Guangdong Res Ctr Interfacial Engn Funct Mat, Shenzhen Key Lab Special Funct Mat,Shenzhen Engn, Coll Mat Sci & Engn,Inst Deep Underground Sci & G, Shenzhen 518060, Peoples R China

Xie, Heping
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Shenzhen Univ, Guangdong Res Ctr Interfacial Engn Funct Mat, Shenzhen Key Lab Special Funct Mat,Shenzhen Engn, Coll Mat Sci & Engn,Inst Deep Underground Sci & G, Shenzhen 518060, Peoples R China Shenzhen Univ, Guangdong Res Ctr Interfacial Engn Funct Mat, Shenzhen Key Lab Special Funct Mat,Shenzhen Engn, Coll Mat Sci & Engn,Inst Deep Underground Sci & G, Shenzhen 518060, Peoples R China

Gu, Kunming
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Shenzhen Univ, Guangdong Res Ctr Interfacial Engn Funct Mat, Shenzhen Key Lab Special Funct Mat,Shenzhen Engn, Coll Mat Sci & Engn,Inst Deep Underground Sci & G, Shenzhen 518060, Peoples R China Shenzhen Univ, Guangdong Res Ctr Interfacial Engn Funct Mat, Shenzhen Key Lab Special Funct Mat,Shenzhen Engn, Coll Mat Sci & Engn,Inst Deep Underground Sci & G, Shenzhen 518060, Peoples R China

Li, Junqin
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Shenzhen Univ, Guangdong Res Ctr Interfacial Engn Funct Mat, Shenzhen Key Lab Special Funct Mat,Shenzhen Engn, Coll Mat Sci & Engn,Inst Deep Underground Sci & G, Shenzhen 518060, Peoples R China Shenzhen Univ, Guangdong Res Ctr Interfacial Engn Funct Mat, Shenzhen Key Lab Special Funct Mat,Shenzhen Engn, Coll Mat Sci & Engn,Inst Deep Underground Sci & G, Shenzhen 518060, Peoples R China
机构:
[1] Shenzhen Univ, Guangdong Res Ctr Interfacial Engn Funct Mat, Shenzhen Key Lab Special Funct Mat,Shenzhen Engn, Coll Mat Sci & Engn,Inst Deep Underground Sci & G, Shenzhen 518060, Peoples R China
基金:
中国国家自然科学基金;
关键词:
Thermoelectric module;
half-Heusler;
contact resistance;
intermetallic compounds;
RECENT PROGRESS;
SIGE ALLOY;
PERFORMANCE;
OPTIMIZATION;
ENHANCEMENT;
DESIGN;
TI;
D O I:
10.1007/s11664-019-07514-x
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
As a type of moderate- and high-temperature thermoelectric materials, half-Heusler thermoelectric materials have a unique advantage in terms of their power factors and mechanical properties, and the figure of merit (ZT) of FeNb0.88Hf0.12Sb reaches 1.0 at 600 degrees C. In this paper, after taking into account factors such as electrical conductivity, thermal conductivity, melting point, and metal activity, silver (Ag) was selected as the barrier layer material. The barrier layer and thermoelectric materials were welded together by atomic diffusion using spark plasma sintering. There was no obvious elemental diffusion on the connection surface after sintering, indicating that Ag did not impact the performance of FeNb0.88Hf0.12Sb. However, many cracks appeared on the joint surface during the aging process. In further experiments, we added a small amount of nickel (Ni) into the Ag to achieve a close connection between the barrier layer and FeNb0.88Hf0.12Sb. Moreover, we analyzed the interface of the intermetallic compounds after aging for 192 h, which showed that Ni3Nb and Ni6Nb7 compounds formed at the interface. The contact resistance was tested by a scanning probe method, and the resistivity of the barrier layer was determined to be 0.4 mu omega cm(2), which is far less than that of other barrier layers. Moreover, the connection strength was greater than 40 MPa. When Ag0.9Ni0.1 was used as the barrier layer to compose the half-Heusler thermoelectric module, the thermoelectric conversion efficiency reached 7.33%, and there was no significant decrease in efficiency during the cyclic test.
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收藏
页码:6815 / 6822
页数:8
相关论文
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South Univ Sci & Technol China, Shenzhen Key Lab Thermoelect Mat, Shenzhen 518055, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

Ying, Pingjun
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Zhao, Xinbing
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Zhejiang Univ, Key Lab Adv Mat & Applicat Batteries Zhejiang Pro, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China