Low voltage BICMOS switched-current circuits

被引：0

作者：

Hamed, HFA ^{[1
]}

Khalil, AH ^{[1
]}

Embabi, SHK ^{[1
]}

Salama, AE ^{[1
]}

机构：

[1] El Menia Univ, Dept Elect Engn, El Menia, Egypt

来源：

ICM'99: ELEVENTH INTERNATIONAL CONFERENCE ON MICROELECTRONICS - PROCEEDINGS | 1999年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A study about the advantages of using BICMOS technology in the design of SI current memory cells is presented. A double sampling bilinear integrator based on BICMOS current memory cell has been built. As application for the BICMOS integrator. third order low pass elliptic filter has been designed. The simulation results show an accurate filter response for sampling frequencies up to 40MHz, using a nominal 3V power supply and the THD is -40dB at i(in) = 0.5I(bias).

引用

页码：205 / 208

页数：4