On the optimization and design of SiGe HBT cascode low-noise amplifiers

被引：3
|
作者：
Liang, QQ
Niu, GF
Cressler, JD
Taylor, S
Harame, DL
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Georgia Elect Design Ctr, Atlanta, GA 30332 USA
[2] Auburn Univ, Auburn, AL 36849 USA
[3] Intel Corp, Hillsboro, OR 97124 USA
[4] IBM Corp, Essex Jct, VT 05452 USA
来源：
SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 03期
关键词：
LNA; cascode; SiGeHBTs; input third-order intercept point (IIP3); noise figure; Volterra series;
D O I：
10.1016/j.sse.2004.10.002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work presents a new design methodology for inductively-degenerated cascode low-noise amplifiers using advanced epitaxialbase SiGe HBTs. IIP3 and noise figure are simulated using a calibrated linear circuit analysis and Volterra series methodology as a function of the two major design variables: emitter geometry and biasing current. Analytical IIP3 expressions with/without the CB capacitance are derived and used to explain the numerical simulation results. The cancellation among individual non-linearities is maximized at a certain IC and emitter length combination, thus producing an IIP3 peak. The analytical expressions are in good agreement with the numerical simulation results, and can be used for robust circuit design. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：329 / 341
页数：13
相关论文
共 50 条
  • [1] Geometry and bias current optimization for SiGe HBT cascode low-noise amplifiers
    Liang, QQ
    Niu, GF
    Cressler, JD
    Taylor, S
    Harame, DL
    2002 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2002, : 407 - 410
  • [2] Geometry and bias current optimization for SiGe HBT cascode low-noise amplifiers
    Liang, QQ
    Niu, GF
    Cressler, JD
    Taylor, S
    Harame, DL
    2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2002, : 517 - 520
  • [3] Best Practices to Ensure the Stability of SiGe HBT Cascode Low Noise Amplifiers
    Schmid, Robert L.
    Coen, Christopher T.
    Shankar, Subramaniam
    Cressler, John D.
    2012 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2012,
  • [4] Design of cryogenic SiGe low-noise amplifiers
    Weinreb, Sander
    Bardin, Joseph C.
    Mani, Hamdi
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2007, 55 (11) : 2306 - 2312
  • [5] Design and On-Wafer Characterization of G-Band SiGe HBT Low-Noise Amplifiers
    Coen, Christopher T.
    Ulusoy, Ahmet Cagri
    Song, Peter
    Ildefonso, Adrian
    Kaynak, Mehmet
    Tillack, Bernd
    Cressler, John D.
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2016, 64 (11) : 3631 - 3642
  • [6] On the Reliability of SiGe HBT Cascode Driver Amplifiers
    Oakley, Michael A.
    Wier, Brian
    Raghunathan, Uppili S.
    Chakraborty, Partha S.
    Cressler, John D.
    2014 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, 2014, : 445 - 448
  • [7] Low Power Ku- and Ka-Band SiGe HBT Low-Noise Amplifiers
    Ahmed, Syed Sharfuddin
    Schumacher, Hermann
    2020 AUSTROCHIP WORKSHOP ON MICROELECTRONICS (AUSTROCHIP), 2020, : 57 - 61
  • [8] Ultra-low-power X-band SiGe HBT low-noise amplifiers
    Roux, P.
    Baeyens, Y.
    Weiner, J.
    Chen, Y. K.
    2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6, 2007, : 1779 - +
  • [9] Design of SiGe HBT UWB low noise amplifier based on Darlington Cascode structure
    Ding, Chunbao
    Zhang, Wanrong
    Jin, Dongyue
    Xie, Hongyun
    Chen, Liang
    Shen, Pei
    Zhang, Donghui
    Liu, Boyu
    Zhou, Yongqiang
    Guo, Zhenjie
    Gaojishu Tongxin/Chinese High Technology Letters, 2012, 22 (10): : 1070 - 1076
  • [10] Design of 3-6 GHz SiGe HBT cascode low noise amplifier
    Ding, C.-B. (chunbaoding@emails.bjut.edu.cn), 1600, Beijing University of Technology (38):
12345