Growth Mechanism and Defects of <111>-Oriented β-SiC Films Deposited by Laser Chemical Vapor Deposition

被引：35
作者：
Zhang, Song [1 ,2 ]
Xu, Qingfang [1 ]
Tu, Rong [1 ,2 ]
Goto, Takashi [2 ]
Zhang, Lianmeng [1 ]
机构：
[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2015年 / 98卷 / 01期
基金：
中国国家自然科学基金;
关键词：
HETEROEPITAXIAL GROWTH; EPITAXIAL-GROWTH; MICROSTRUCTURE; SIMULATIONS; TEXTURE; FACE;
D O I：
10.1111/jace.13248
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Two kinds of <111>-oriented -SiC films with pyramidlike and needlelike morphologies were obtained by laser chemical vapor deposition. Their mean grain size (<d>) as a function of the distance from substrate (h) follows power laws of <d> h(0.62) and <d> h(0.71), respectively. The planar defects in pyramidlike films were perpendicular to the growth direction, whereas those in needlelike -SiC films inclined to growth direction, which can be annihilated with meeting of anti-couple defect. This self-vanish of defects would develop a new approach to fabricate high quality <111>-oriented -SiC.
引用
收藏
页码：236 / 241
页数：6
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