TAOS based Cu/TiW/IGZO/Ga2O3/Pt bilayer CBRAM for low-power display technology

被引：31

作者：

Gan, Kai-Jhih ^{[1
,2
]}

Liu, Po-Tsun ^{[3
]}

Chiu, Yu-Chuan ^{[3
]}

Ruan, Dun-Bao ^{[1
,2
]}

Chien, Ta-Chun ^{[3
]}

Sze, Simon M. ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

来源：

SURFACE & COATINGS TECHNOLOGY | 2018年 / 354卷

关键词：

Conductive-bridge random access memory (CBRAM); Indium-gallium-zinc-oxide; Gallium oxide; Thermal conductivity; Physical vapor deposition; THIN-FILM TRANSISTORS; HIGH-PERFORMANCE; MEMORY; OXIDE;

D O I：

10.1016/j.surfcoat.2018.08.093

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We demonstrate the characteristics of a conductive-bridging random access memory (CBRAM) with Cu/TiW/InGaZnO/Ga2O3/Pt stack structure. The addition of a thin metal-oxide layer (4.5 nm-thick Ga2O3) in the bottom of the CBRAM device significantly increases the off-state resistance (Rom') and the memory window. The IGZO bi-layer CBRAM shows the excellent memory performances, such as low operation current (down to 50 A), high on/off resistance ratio (> 10(3)), high switching endurance (up to 10(3) cycles) and the capability of multi-level tuning. Meanwhile, high thermal stability was also achieved. Three decades of resistance window is constantly maintained beyond 10(4)s at 85 degrees C. The resistive switching stability and electrical uniformity of bi-layer IGZO/Ga2O3 CBRAM device are obviously enhanced as compared with the one only with a single layer of IGZO film. These results have given a great potential for the transparent amorphous oxide semiconductor (TAOS)-based material utilizing in CBRAM stacks and integrating into the display circuits for future memory-in-pixel applications.

引用

页码：169 / 174

页数：6

共 35 条

[1] Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM [J].

Arita, Masashi ;

Takahashi, Akihito ;

Ohno, Yuuki ;

Nakane, Akitoshi ;

Tsurumaki-Fukuchi, Atsushi ;

Takahashi, Yasuo .

SCIENTIFIC REPORTS, 2015, 5

[2] A Thermally Stable and High-Performance 90-nm Al2O3\Cu-Based 1T1R CBRAM Cell [J].

Belmonte, Attilio ;

Kim, Woosik ;

Chan, Boon Teik ;

Heylen, Nancy ;

Fantini, Andrea ;

Houssa, Michel ;

Jurczak, Malgorzata ;

Goux, Ludovic .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (11) :3690-3695

[3] A numerical study of multi filament formation in metal-ion based CBRAM [J].

Berco, Dan ;

Tseng, Tseung-Yuen .

AIP ADVANCES, 2016, 6 (02)

[4] Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices [J].

Celano, Umberto ;

Goux, Ludovic ;

Belmonte, Attilio ;

Opsomer, Karl ;

Franquet, Alexis ;

Schulze, Andreas ;

Detavernier, Christophe ;

Richard, Olivier ;

Bender, Hugo ;

Jurczak, Malgorzata ;

Vandervorst, Wilfried .

NANO LETTERS, 2014, 14 (05) :2401-2406

[5] Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture [J].

Chand, Umesh ;

Huang, Chun-Yang ;

Kumar, Dayanand ;

Tseng, Tseung-Yuen .

APPLIED PHYSICS LETTERS, 2015, 107 (20)

[6] Effects of heat dissipation on unipolar resistance switching in Pt/NiO/Pt capacitors [J].

Chang, S. H. ;

Chae, S. C. ;

Lee, S. B. ;

Liu, C. ;

Noh, T. W. ;

Lee, J. S. ;

Kahng, B. ;

Jang, J. H. ;

Kim, M. Y. ;

Kim, D. -W. ;

Jung, C. U. .

APPLIED PHYSICS LETTERS, 2008, 92 (18)

[7] Low-Frequency Noise Characterization of Amorphous InGaZnO Thin-Film Transistors with Double-Stack Ga2O3/SiO2 Dielectric [J].

Chang, T. H. ;

Chiu, C. J. ;

Chang, S. J. ;

Yang, T. H. ;

Wu, S. L. ;

Weng, W. Y. .

ECS SOLID STATE LETTERS, 2014, 3 (10) :Q55-Q58

[8]

Chen Z. H., 2016, IEEE INT NAN C, P1

[9] Study on the resistive switching time of TiO2 thin films [J].

Choi, Byung Joon ;

Choi, Seol ;

Kim, Kyung Min ;

Shin, Yong Cheol ;

Hwang, Cheol Seong ;

Hwang, Sung-Yeon ;

Cho, Sung-sil ;

Park, Sanghyun ;

Hong, Suk-Kyoung .

APPLIED PHYSICS LETTERS, 2006, 89 (01)

[10] High performance and low cost transparent electrodes based on ultrathin Cu layer [J].

Ebner, David ;

Bauch, Martin ;

Dimopoulos, Theodoros .

OPTICS EXPRESS, 2017, 25 (08) :A240-A252

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