N-heteroquinones: quadruple weak hydrogen bonds and n-channel transistors

被引：84
|
作者：
Tang, Qin [1 ]
Liang, Zhixiong [1 ]
Liu, Jing [1 ]
Xu, Jianbin [2 ]
Miao, Qian [1 ,3 ]
机构：
[1] Chinese Univ Hong Kong, Dept Chem, Shatin, Hong Kong, Peoples R China
[2] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong, Peoples R China
[3] Chinese Univ Hong Kong, Ctr Novel Funct Mol, Shatin, Hong Kong, Peoples R China
来源：
CHEMICAL COMMUNICATIONS | 2010年 / 46卷 / 17期
关键词：
FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; ORGANIC SEMICONDUCTORS; DERIVATIVES; DIHYDRODIAZAPENTACENE; HETEROCYCLES; ELECTRONICS; PENTACENE; TRANSPORT; GROWTH;
D O I：
10.1039/c001215g
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
This study demonstrates that the easily synthesized N-heteroquinones, having unusual quadruple weak hydrogen bonds of a DDAA-AADD pattern, can function as n-type organic semiconductors in OTFTs with high electron mobility.
引用
收藏
页码：2977 / 2979
页数：3
相关论文
共 50 条
  • [1] Charge transport and electronic properties of N-heteroquinones: quadruple weak hydrogen bonds and strong π-π stacking interactions
    Yang, Guochun
    Si, Yanling
    Geng, Yun
    Yu, Fei
    Wu, Qingxiu
    Su, Zhongmin
    THEORETICAL CHEMISTRY ACCOUNTS, 2011, 128 (02) : 257 - 264
  • [2] Charge transport and electronic properties of N-heteroquinones: quadruple weak hydrogen bonds and strong π–π stacking interactions
    Guochun Yang
    Yanling Si
    Yun Geng
    Fei Yu
    Qingxiu Wu
    Zhongmin Su
    Theoretical Chemistry Accounts, 2011, 128 : 257 - 264
  • [3] MAGNETOSENSITIVITY OF N-CHANNEL MOS-TRANSISTORS
    SMIRNOV, ND
    ROUMENIN, CS
    DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1981, 34 (11): : 1499 - 1501
  • [4] Unsymmetrical n-channel semiconducting naphthalenetetracarboxylic diimides assembled via hydrogen bonds
    Katz, HE
    Otsuki, J
    Yamazaki, K
    Suka, A
    Takido, T
    Lovinger, AJ
    Raghavachari, K
    CHEMISTRY LETTERS, 2003, 32 (06) : 508 - 509
  • [5] An improvement of SOA on n-channel SOI LDMOS transistors
    Yang, IS
    Koh, YH
    Jeong, JH
    Choi, YS
    Kwon, OK
    ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 1998, : 379 - 382
  • [6] IMPROVED SUBTHRESHOLD CHARACTERISTICS OF N-CHANNEL SOI TRANSISTORS
    DAVIS, JR
    GLACCUM, AE
    REESON, K
    HEMMENT, PLF
    IEEE ELECTRON DEVICE LETTERS, 1986, 7 (10) : 570 - 572
  • [7] EFFECT OF ELECTRON IRRADIATION ON N-CHANNEL MOS TRANSISTORS
    STANLEY, AG
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (12): : 2150 - &
  • [8] TOTAL N-CHANNEL CONTROL IN THE WEAK FIELD DOMAIN
    SHAPIRO, M
    BRUMER, P
    JOURNAL OF CHEMICAL PHYSICS, 1992, 97 (09): : 6259 - 6261
  • [9] Persistent photoconductivity effects in printed n-channel organic transistors
    Ng, T.N. (tnng@parc.com), 1600, American Institute of Physics Inc. (113):
  • [10] Persistent photoconductivity effects in printed n-channel organic transistors
    Ng, Tse Nga
    Fujieda, Ichiro
    Street, Robert A.
    Veres, Janos
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (09)
12345