Influence of substrate temperature on the deposition of the homostructure SnO2:Sb/SnO2:Er via sol-gel dip-coating

被引：2
作者：
dos Santos, Stevan B. O. [1 ]
Lima, Joao V. M. [1 ]
Boratto, Miguel H. [2 ]
Scalvi, Luis V. A. [1 ,3 ]
机构：
[1] Sao Paulo State Univ UNESP, Sch Sci, Dept Phys, Bauru, Brazil
[2] Fed Univ Santa Catarina UFSC, Dept Phys, Postgrad Program Phys, Florianopolis, SC, Brazil
[3] Sao Paulo State Univ UNESP, Sch Sci, POSMAT Postgrad Program Mat Sci & Technol, Bauru, Brazil
来源：
FERROELECTRICS | 2019年 / 545卷 / 01期
基金：
巴西圣保罗研究基金会;
关键词：
Tin dioxide; erbium; antimony; dip-coating; heated substrate; SNO2; THIN-FILMS; ER;
D O I：
10.1080/00150193.2019.1621706
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
SnO2 thin films doped with Sb5+ and Er3+ were deposited by sol-gel-dip-coating forming the homostructure SnO2:Sb/SnO2:Er, between aluminum contacts. The films were deposited on glass substrates at room temperature and 90 degrees C. The homostructure showed capacitive behavior as obtained from cyclic voltammetry, and the sample deposited with heated substrate at 90 degrees C showed a curve similar to a switchable ferroelectric diode, mainly for low scan rates. Heated substrates also lead to device higher transmittance in the near infrared, related to lower electron concentration, but the improvement in the sample quality leads to higher mobility, compensating the lower electron concentration, causing an overall effect of higher conductivity.
引用
收藏
页码：10 / 21
页数：12
相关论文
共 24 条
  • [1] Ashcroft N.W., 1976, SOLID STATE PHYS
  • [2] Investigation of sensing properties of sol-gel processed 4 at%Sb:SnO2/TiO2 thin films
    Boratto, Miguel H.
    Ramos, Roberto A., Jr.
    Scalvi, Luis V. A.
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 29 (01) : 467 - 473
  • [3] Accelerating materials development for photoelectrochemical hydrogen production: Standards for methods, definitions, and reporting protocols
    Chen, Zhebo
    Jaramillo, Thomas F.
    Deutsch, Todd G.
    Kleiman-Shwarsctein, Alan
    Forman, Arnold J.
    Gaillard, Nicolas
    Garland, Roxanne
    Takanabe, Kazuhiro
    Heske, Clemens
    Sunkara, Mahendra
    McFarland, Eric W.
    Domen, Kazunari
    Miller, Eric L.
    Turner, John A.
    Dinh, Huyen N.
    [J]. JOURNAL OF MATERIALS RESEARCH, 2010, 25 (01) : 3 - 16
  • [4] The conduction mechanism of large on/off ferroelectric diode currents in epitaxial (111) BiFeO3 thin film
    Chen, Zhihui
    He, Long
    Zhang, Fan
    Jiang, Jun
    Meng, Jianwei
    Zhao, Boyuan
    Jiang, Anquan
    [J]. JOURNAL OF APPLIED PHYSICS, 2013, 113 (18)
  • [5] TEMPERATURE-DEPENDENCE AND QUENCHING PROCESSES OF THE INTRA-4F LUMINESCENCE OF ER IN CRYSTALLINE SI
    COFFA, S
    FRANZO, G
    PRIOLO, F
    POLMAN, A
    SERNA, R
    [J]. PHYSICAL REVIEW B, 1994, 49 (23): : 16313 - 16320
  • [6] Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics
    Damjanovic, D
    [J]. REPORTS ON PROGRESS IN PHYSICS, 1998, 61 (09) : 1267 - 1324
  • [7] Comparison of optical and electrical characteristics of SnO2-based thin films deposited by pyrosol from different tin precursors
    Dien, E
    Laurent, JM
    Smith, A
    [J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 1999, 19 (6-7) : 787 - 789
  • [8] Laser Scribing of High-Performance and Flexible Graphene-Based Electrochemical Capacitors
    El-Kady, Maher F.
    Strong, Veronica
    Dubin, Sergey
    Kaner, Richard B.
    [J]. SCIENCE, 2012, 335 (6074) : 1326 - 1330
  • [9] Structural Characterization of Nanocrystalline Sb-Doped SnO2 Xerogels by Multiedge X-ray Absorption Spectroscopy
    Geraldo, V.
    Briois, V.
    Scalvi, L. V. A.
    Santilli, C. V.
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 114 (45) : 19206 - 19213
  • [10] Geraldo Viviany, 2003, Mat. Res., V6, P451
123