AC Electrical Characterization of Au/Porous Silicon/p-Si Thin Films

被引：3

作者：

Chavarria, M. A. ^{[1
]}

Fonthal, F. ^{[1
]}

机构：

[1] Univ Autonoma Occidente, Fac Ingn, Adv Mat Micro & Nanotechnol Res Grp, Cali, Colombia

来源：

CERMA: 2009 ELECTRONICS ROBOTICS AND AUTOMOTIVE MECHANICS CONFERENCE | 2009年

关键词：

Porous Silicon; Electrical conductivity; Electrical model circuit and Metal - Semiconductors structure; POROUS SILICON; TRANSPORT; CONDUCTIVITY; IMPEDANCE; CONTACTS; LAYER;

D O I：

10.1109/CERMA.2009.15

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The AC electrical characterization of Au/porous silicon/p-Si structures is presented The Porous Silicon layers were prepared by electrochemical etching in p-type silicon < 100 > substrates. The AC electrical measurements capacitance - conductance frequency were performed from 5 Hz to 10 MHz, at room temperature in the DC range of +/- 2 V. We studied two structures types; first a conductor type Au/PS/Au and second diode type Au/PS/p-Si/Al. We have obtained the parameter fitting values according an electrical model circuit in AC corresponding to the sample fabricated. In the electrical characterization the low frequency phenomenon, the geometric capacitance and the depletion capacitances presented in the structures were determined

引用

页码：287 / 292

页数：6

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