Nanoscale patterning of self-assembled monolayers with electrons

被引:122
作者
Gölzhäuser, A
Geyer, W
Stadler, V
Eck, W
Grunze, M
Edinger, K
Weimann, T
Hinze, P
机构
[1] Heidelberg Univ, D-69120 Heidelberg, Germany
[2] Univ Maryland, Lab Ion Beam Res & Applicat, College Pk, MD 20742 USA
[3] Phys Tech Bundesanstalt, D-38116 Braunschweig, Germany
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 06期
关键词
D O I
10.1116/1.1319711
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We show the fabrication of gold nanostructures using self-assembled monolayers of aliphatic and aromatic thiols as positive and negative electron beam resists. We applied a simple and versatile proximity printing technique using focused ion beam structured stencil masks and low energy (300 eV) electrons. We also used conventional e-beam lithography with a beam energy of 2.5 keV and doses from 3500 to 80 000 muC/cm(2). Gold patterns were generated by wet etching in KCN/KOH and characterized by atomic force microscopy and scanning electron microscopy. The width of the finest lines is similar to 20 nm; their edge definition is limited by the isotropic etching process in the polycrystalline gold. (C) 2000 American Vacuum Society. [S0734-211X(00)05906-0].
引用
收藏
页码:3414 / 3418
页数:5
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