Linear magnetoresistance in monolayer epitaxial graphene grown on SiC

被引：15

作者：

Chuang, Chiashain ^{[1
,2
]}

Yang, Yanfei ^{[1
]}

Elmquist, Randolph E. ^{[1
]}

Liang, Chi-Te ^{[2
]}

机构：

[1] NIST, Gaithersburg, MD 20899 USA

[2] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

来源：

MATERIALS LETTERS | 2016年 / 174卷

关键词：

Graphene; Magnetoresistance; Carbon Materials; Electrical properties; GIANT MAGNETORESISTANCE; FILMS; GAS;

D O I：

10.1016/j.matlet.2016.03.033

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have observed classical linear magnetoresistance (LMR), which persists to room temperature, in clean monolayer epitaxial graphene grown on SiC. Such results are consistent with the resistor network model based on density inhomogeneity in a disordered two-dimensional system, though the observed LMR is non-saturating possibly due to formation of a quantum Hall-like state beyond the highest measurement magnetic field. Given the prospect of epitaxial graphene in high-frequency transistors, our experimental data pave the way for integration of magnetic sensing devices with high-frequency devices based on wafer-scale graphene. Published by Elsevier B.V.

引用

页码：118 / 121

页数：4

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