Site-Specific Self-Assembled Liquid-Gated ZnO Nanowire Transistors for Sensing Applications

被引：39

作者：

Pachauri, Vivek ^{[1
]}

Vlandas, Alexis ^{[1
]}

Kern, Klaus ^{[1
,2
]}

Balasubramanian, Kannan ^{[1
]}

机构：

[1] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany

[2] Ecole Polytech Fed Lausanne, Inst Phys Nanostruct, CH-1015 Lausanne, Switzerland

来源：

SMALL | 2010年 / 6卷 / 04期

关键词：

chemical sensors; field-effect transistors; liquid gating; site-specific growth; ZnO nanowires; ZINC-OXIDE; SEMICONDUCTOR NANOWIRES; PHOTOLUMINESCENCE; FABRICATION; DEVICES; GROWTH;

D O I：

10.1002/smll.200900876

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A scalable bottom-up solution-based approach for the site-specific realization of ZnO nanowire (ZnO-NW)-based field-effect transistors for sensing applications in liquids is reported. The nanowires are grown across pre-defined electrodes patterned by photolithography. Site specificity is attained by the use of nanoparticles acting as seeds. Using integrated on-chip microchannels and microfabricated gate electrodes, electrochemically gated ZnO-NW network transistors functioning in liquids are demonstrated. The optimized devices are rendered sensitive to pH through chemical functionalization. The unique combination of the sensitivity, site specificity, scalability, and cost effectiveness of the technique opens up avenues for the routine realization of one-dimensional nanostructure-based chemical and biosensors for analytical and diagnostic applications.

引用

页码：589 / 594

页数：6

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