Long-Wave InAs/GaSb Superlattice Detectors Based on nBn and Pin Designs

被引：32

作者：

Khoshakhlagh, Arezou ^{[1
]}

Myers, Stephen ^{[1
]}

Kim, HaSul ^{[1
]}

Plis, Elena ^{[1
]}

Gautam, Nutan ^{[1
]}

Lee, Sang Jun ^{[2
]}

Noh, Sam Kyo ^{[2
]}

Dawson, L. Ralph ^{[1
]}

Krishna, Sanjay ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Dept Elect & Comp Engn, Albuquerque, NM 87106 USA

[2] KRISS, Taejon 305340, South Korea

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2010年 / 46卷 / 06期

关键词：

InAs/GaSb type-II superlattices; infrared detectors; longwave detector; nBn detector; pin detector;

D O I：

10.1109/JQE.2010.2041635

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The development of type-II InAs/GaSb superlattice (SL) detectors with nBn and pin designs for the long-wave infrared (LWIR) spectral region is discussed. The dependence of dark current density and responsitivity of the pin photodetectors on doping type and level is investigated, and it is shown that dark current density decreases while responsivity and detectivity increase by p-doping the absorbing region of pin detectors. Comparison of optical and electrical properties of SL photodetectors based on the nBn and pin designs is reported. nBn devices have higher specific detectivity (D*), responsivity, and lower dark current density as compared to the pin detectors. The decrease in dark current in nBn devices is due to suppression of Shockley-Reed-Hall and surface leakage currents. A specific detectivity (D*) of 7.15 x 10(9) cm Hz(1/2) W(-1) at 0.1 V, a responsivity of 1.28 A/W and a quantum efficiency of 21.3% under 0.2 V biasing at 77 K and 7 m, assuming unity gain, was obtained in the nBn device.

引用

页码：959 / 964

页数：6

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